inchange semiconductor isc product specification isc silicon npn power transistor MJ12004 description collector-emitter voltage- v cex = 1500v safe operation area switching time with inductive load applications designed for use in large screen color deflection circuits. absolute maximum ratings(t a =25 ) symbol parameter value unit v cex collector-emitter voltage 1500 v v ceo(sus) collector-emitter voltage 750 v v ebo emitter-base voltage 5 v i c collector current-continuous 5 a i b b base current-continuous 4 a i e emitter current-continuous 9 a p c collector power dissipation@t c =25 100 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.25 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor MJ12004 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =50ma ; i b =0 b 750 v v ce (sat)-1 collector-emitter saturation voltage i c =4.5a; i b = 1.8a 5.0 v v ce (sat)-2 collector-emitter saturation voltage i c =3.5a; i b = 1.5a 5.0 v v be (sat)-1 base-emitter saturation voltage i c = 4.5a; i b = 1.8a 1.5 v v be (sat)-2 base-emitter saturation voltage i c =3.5a; i b = 1.5a 1.5 v i ces collector cutoff current v ce = 1500v; v be = 0 1.0 ma i ebo emitter cutoff current v eb = 5v; i c =0 1.0 ma h fe dc current gain i c = 0.5a ; v ce = 5v 12 f t current-gain?bandwidth product i c = 0.1a; v ce = 5v; f test =1.0mhz 4 mhz c ob output capacitance i e = 0; v cb = 10v; f test =0.1mhz 125 pf t f fall time i c =4.5a , i b1 =1.8a; l b =8 h 0.4 1.0 s isc website www.iscsemi.cn 2
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